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1

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N.

Journal:

Russian Physics Journal

Year:

2018

Language:

english

File:

PDF, 172 KB

english, 2018

2

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Application of laser module with driver based on avalanche S-diode for light-emitting diode structure characterization

Kopyev, V. V., Prudaev, I. A., Avdochenko, B. I.

Year:

2015

Language:

english

File:

PDF, 263 KB

english, 2015

3

Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

Romanov, Ivan S., Prudaev, Ilya A., Kopyev, Viktor V.

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 434 KB

english, 2016

4

Charge-carrier lifetimes in high-resistance GaAs doped by chromium diffusion

D. L. Budnitskii, V. A. Novikov, O. P. Tolbanov, I. A. Prudaev

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

5

Diffusion and solubility of electrically active iron atoms in gallium arsenide

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 210 KB

english, 2008

6

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

7

Chromium diffusion in GaAs in an open system

M. V. Ardyshev, I. A. Prudaev, O. P. Tolbanov, S. S. Khludkov

Journal:

Inorganic Materials

Year:

2008

Language:

english

File:

PDF, 190 KB

english, 2008

8

Switching avalanche S-diodes based on GaAs multilayer structures

I. A. Prudaev, S. S. Khludkov, M. S. Skakunov, O. P. Tolbanov

Journal:

Instruments and Experimental Techniques

Year:

2010

Language:

english

File:

PDF, 241 KB

english, 2010

9

A switching delay of avalanche S-diodes in optical-drive circuits

I. A. Prudaev, M. S. Skakunov, O. P. Tolbanov, S. S. Khludkov, K. M. Degtyarenko

Journal:

Instruments and Experimental Techniques

Year:

2011

Language:

english

File:

PDF, 159 KB

english, 2011

10

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, I. V. Ivonin

Journal:

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

11

Current limitation inA3B5nitride light-emitting diodes under forward bias

Prudaev, I. A., Ivonin, I. V., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2012

Language:

english

File:

PDF, 76 KB

english, 2012

12

A photovoltaic effect in the metal–high-resistive GaAs:Cr contact

Budnitskii, D. L., Novikov, V. A., Prudaev, I. A., Тоlbanov, О. P., Yaskevich, Т. М.

Journal:

Russian Physics Journal

Year:

2012

Language:

english

File:

PDF, 440 KB

english, 2012

13

Gallium nitride as a material for spintronics

Khludkov, S. S., Prudaev, I. A., Тоlbanov, О. P.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 427 KB

english, 2013

14

Physical properties of indium nitride, impurities, and defects

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 226 KB

english, 2014

15

Lithium

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 218 KB

english, 2014

16

Tosedostat

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 219 KB

english, 2014

17

Antipsychotics

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 219 KB

english, 2014

18

Recombination Currents in Light-Emitting Diodes based on (AlxGa1–x)0.5In0.5P/(AlyGa1–y)0.5In0.5P Multiple Quantum Wells

Prudaev, I. А., Skakunov, M. S., Lelekov, М. А., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 428 KB

english, 2013

19

Electroluminescence Spectra of “Red” LED AlGaInP / GaAs Structures

Marmalyuk, А. А., Gorlachuk, P. V., Ryaboshtan, Yu. L., Brudnyi, V. N., Prudaev, I. А., Romanov, I. S., Lelekov, М. А.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 380 KB

english, 2013

20

Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

Prudaev, I. A., Romanov, I. S., Kop’ev, V. V., Shirapov, S. B., Тоlbanov, О. P., Khludkov, S. S.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

21

The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells

Romanov, I. S., Prudaev, I. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 315 KB

english, 2013

22

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Prudaev, I. A., Golygin, I. Yu., Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.

Journal:

Year:

2013

Language:

english

File:

PDF, 268 KB

english, 2013

23

Electrical Properties OF GaAs Doped with Iron

Khludkov, S. S., Prudaev, I. A., Novikov, V. A., Budnitskii, D. L., Lopatetskaya, K. S.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 211 KB

english, 2014

24

Internal Quantum Efficiency of InGaN/GaN Led Structures Grown on a Patterned Sapphire Substrate

Prudaev, I. A., Romanov, I. S., Novikov, Vad. A., Marmalyuk, А. А., Kureshov, V. A., Sabitov, D. R., Маzalov, А. V.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 563 KB

english, 2014

25

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

I. S. Romanov,I. A. Prudaev,А. А. Marmalyuk,V. A. Kureshov…

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 382 KB

english, 2014

26

Decomposition of a supersaturated solid solution of Fe in GaAs

I. A. Prudaev,S. S. Khludkov,A. K. Gutakovskii,V. A. Novikov…

Journal:

Inorganic Materials

Year:

2012

Language:

english

File:

PDF, 1.10 MB

english, 2012

27

[IEEE 2011 International Siberian Conference on Control and Communications (SIBCON 2011) - Krasnoyarsk, Russia (2011.09.15-2011.09.16)] 2011 International Siberian Conference on Control and Communications (SIBCON) - Switching delay of avalanche S-diodes in circuit with optical drive

Prudaev, I. A., Skakunov, M. S., Tolbanov, O. P., Khludkov, S. S., Degtyarenko, K. M.

Year:

2011

Language:

english

File:

PDF, 380 KB

english, 2011

28

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

Prudaev, I.A., Skakunov, M.S., Khludkov, S.S.

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

29

[IEEE 2007 Siberian Conference on Control and Communications - Tomsk, Russia (2007.04.20-2007.04.21)] 2007 Siberian Conference on Control and Communications - Subnanosecond Optoelectronic Switch

Prudaev, I.A., Skakunov, M.S., Tolbanov, O.P.

Year:

2007

Language:

english

File:

PDF, 415 KB

english, 2007

30

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - S-diode with optical control

Skakunov, M.S., Prudaev, I.A., Bachnaruk, A.A.

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

31

Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

Prudaev, Ilya, Tolbanov, Oleg, Khludkov, Stanislav

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 417 KB

english, 2015

32

Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation

Prudaev, Ilya, Sarkisov, Sergey, Tolbanov, Oleg, Kosobutsky, Alexey

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 537 KB

english, 2015

33

Photoelectric characteristics of metal-Ga2O3-GaAs structures

Kalygina, V. M., Vishnikina, V. V., Petrova, Yu. S., Prudaev, I. A., Yaskevich, T. M.

Journal:

Year:

2015

Language:

english

File:

PDF, 504 KB

english, 2015

34

Charge Carrier Transport in LEDs Based on Multiple (AlxGa1–x)0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells

Prudaev, I. A., Oleinik, V. L., Romanov, I. S., Brudnyi, V. N., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 884 KB

english, 2014

35

Hopping Transport of Charge Carriers in LEDs Based on Multiple InGaN/GaN Quantum Wells

Prudaev, I. А., Zubrilkina, Yu. L., Baktybaev, А. А., Romanov, I. S.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 475 KB

english, 2015

36

Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kop’ev, V. V., Novikov, Vad. A., Маrmalyuk, А. А., Кureshov, V. А., Sabitov, D. R., Маzalov, А. V.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 719 KB

english, 2015

37

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Romanov, I S, Prudaev, I A, Kopyev, V V, Marmalyuk, A A, Kureshov, V A, Sabitov, D R, Mazalov, A V

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 1.42 MB

english, 2014

38

[IEEE 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - Tucson, AZ, USA (2014.9.14-2014.9.19)] 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) - Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation

Sarkisov, Sergey Yu., Prudaev, Ilya A., Kosobutsky, Alexey V., Tolbanov, Oleg P., Dunaevsky, Grigory E.

Year:

2014

Language:

english

File:

PDF, 275 KB

english, 2014

39

Deep centers in TiO2-Si structures

Kalygina, V. M., Petrova, Yu. S., Prudaev, I. A., Tolbanov, O. P., Tsupiy, S. Yu.

Journal:

Year:

2015

Language:

english

File:

PDF, 591 KB

english, 2015

40

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Photoelectrical characteristics of TiO2-Si heterostructures

Kalygina, V.M., Egorova, I. S., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 332 KB

english, 2015

41

Generation of Terahertz Radiation in LED Heterostructures with Multiple InGaN/GaN Quantum Wells at Two-Photon Excitation by Femtosecond

Prudaev, I. A., Sarkisov, S. Yu., Tolbanov, O. P., Kosobutsky, А. V.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 910 KB

english, 2015

42

Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

Prudaev, I. A., Kopyev, V. V., Romanov, I. S., Brudnyi, V. N.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 470 KB

english, 2015

43

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - The optical properties of 9 MeV electron irradiated GaSe crystals

Redkin, R. A., Prudaev, I. A., Sarkisov, S. Yu., Kosobutsky, A. V., Brudnyi, V. N.

Year:

2015

Language:

english

File:

PDF, 573 KB

english, 2015

44

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Conduction mechanism of metal-TiO2-Si structures

Kalygina, V.M., Egorova, I. M., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 1019 KB

english, 2015

45

Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3(0001) LED Heterostructures

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kopyev, V. V., Novikov, Vad. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 256 KB

english, 2015

46

Transmission Spectra and Generation of Terahertz Pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe, and GaSe:S Structures

Bereznaya, S. A., Zarubin, A. N., Korotchenko, Z. V., Prudaev, I. A., Red’kin, R. A., Sarkisov, S. Yu., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2015

Language:

english

File:

PDF, 475 KB

english, 2015

47

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Properties of metall-TiO2-Si structures on an alternating signal

Kalygina, V.M., Makarov, V. A., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

File:

PDF, 445 KB

2015

48

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Properties of metall-TiO2-Si structures on an alternating signal

Kalygina, V.M., Makarov, V. A., Prudaev, I.A., Tolbanov, O. P.

Year:

2015

Language:

english

File:

PDF, 445 KB

english, 2015

49

Interlaboratory Proficiency Tests of the Quality Parameters of Fuels as an Effective Approach to Intralaboratory Inspection

Ermakova, E. V., Korchagina, E. N., Prudaev, M. B.

Journal:

Measurement Techniques

Year:

2016

Language:

english

File:

PDF, 225 KB

english, 2016

50

Photoelectrical characteristics of TiO 2 -N-SI heterostructures

Kalygina, V. M., Egorova, I. S., Prudaev, I. A., Tolbanov, O. P., Atuchin, V. V.

Journal:

Microwave and Optical Technology Letters

Year:

2016

Language:

english

File:

PDF, 417 KB

english, 2016

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